RF amplifier module 6000–8000 MHz, GaN 100 W, 50 dBm, SMA, N-J

RF amplifier module — a high-performance broadband radio-frequency (RF) signal amplifier operating in the 6000–8000 MHz range, delivering an output power of up to 100 W. It is designed for integration into RF systems, measurement equipment, and specialized electronic assemblies.

The module is built using advanced GaN (Gallium Nitride) technology, which ensures high amplification efficiency, thermal robustness, and stable operation under heavy loads. High linearity and low distortion levels contribute to high-quality RF signal amplification.

The device operates from a 28–32 V power supply, features a maximum gain of 45 dB, and supports RS-485 and TTL communication interfaces for integration with external control systems.

It is housed in a rugged metal enclosure measuring 170 × 78 × 24.5 mm, designed for screw mounting and installation onto a heatsink.

An appropriate cooling system must be used to ensure effective heat dissipation.

Technical Specifications

• Device Type: RF Amplification Module
• Technology: GaN (Gallium Nitride)
• Frequency Range: 6000–8000 MHz
• Maximum Output Power: 100 W
• Operating Voltage: 28–32 V DC
• Nominal Voltage: 32 V
• Current Consumption: 10–13.5 A
• Recommended Power Supply: 32 V, at least 15 A
• Amplifier Efficiency: 28% at 100 W
• Maximum Gain: 45 dB
• Gain Flatness: ≤5 dB
• Input Power: 5 dBm
• Maximum Safe Input Power: ≤10 dBm
• Output Port VSWR: ≤2
• Operating Temperature: −10...+55 °C
• Power Stability: ±1 dB (−40...+55 °C, per specification)
• Control Interfaces: RS-485, TTL
• RF Input: SMA
• RF Output: N-type Female
• Power Interface: Feedthrough capacitor
• Material Enclosure: metal
• Cooling: heatsink, forced air cooling
• Mounting type: screw mounting
• Dimensions: 170 × 78 × 24.5 mm
• Distance between mounting holes: 164.4 × 72.5 mm
• Mounting screws: M3 × 10 mm

Advantages

• High output power of 100 W — effective RF signal amplification.
• Wide frequency range of 6000–8000 MHz — versatile integration into various RF systems.
• Advanced GaN technology — high efficiency, thermal stability, and reliability of electronic components.
• Gain of up to 45 dB — high-level amplification of the input signal.
• High linearity — minimization of signal distortion during operation.
• RS-485 and TTL interfaces — enables integration with digital control and monitoring systems.
• Metal enclosure — provides mechanical strength and efficient heat dissipation.
• Compact design — convenient for installation into electronic systems and equipment.

Operational Features

The module supports temperature monitoring, current, voltage, and output RF power. For stable operation, it is necessary to ensure proper cooling and use a power supply with an appropriate power rating.