RF amplifier module 400-500 MHz, Gan 50W, 47 dBm, SMA

RF amplifier module 400–500 MHz based on GaN technology - is a highly efficient radio frequency amplifier for working withRF signals in the 400–500 MHz range. The device provides continuous output power up to 50 W, stable gain parameters and reliable operation over a wide temperature range.

The module is made in a compact metal case with forced cooling, is equipped with an output SMA connector and supports an operating voltage range of 24–32 V. Due to low losses, high thermal stability and GaN technology, it is suitable for professional RF systems, engineering solutions and test benches.

Mechanical drawing:

Technical characteristics:

• Model: TTSK-TZ-GAN-50W. 
• Frequency range: 400-500 MHz.
• Output power: 50 W
• Frequency range: 400–500 MHz  (Built-in signal source. Bandwidth does not exceed 120 MHz for 500–1600 MHz; 200 MHz for 1600–6200 MHz)
• Operating voltage: 28 V  (24–32 V)
• Maximum output power: 47 ±0.5 dBm (50 W at ≤3.1–3.7 A. In the range of 100–3000 MHz, consumption is approximately 3.1–3.4 A. In the range of 3–6 GHz, consumption is approximately 3.4–3.7 A.)
• In-band jitter: ≤2 dB (Peak-to-Peak) 
  
• High and low temperature test:
  • Operating ambient temperature:-10 ~ +55 ℃ (supports low temperature start) 
    
  • Gain stability: ±1.5 dB at –40 ℃ ~ +55 ℃ 
  • Power stability: ±1.5 dB at –40 ℃ ~ +55 ℃ 
• Power requirements: ≥4 A at +28 V DC (50 W output power (continuous signal) 
• Power interface: Red for positive/B+, black for negative/B-
• Amplifier enable:  White wire: turn on when the signal level is high, turn off when the level is low
• RF output connector: SMA
• Dimensions: 112 × 38 × 19.5 mm (Excluding connector)
• Mounting holes: 129.1 × 46.1 mm, M3.0 × 4
• Weight:185 g

Mechanical specifications

• Case type: metal module
• Cooling method: bottom-mounted heat sink
• RF connector type: SMA 
• Cooling requirements: forced air circulation or heat dissipation system
• Mounting method: fixing screws

Features

• Wideband operation and stable output power
• GaN technology - high efficiency, thermal stability and high voltage resistance
• Low loss and stable RF signal transmission
• Compact form factor for professional integration

Notes:

   -   All parameters are measured at an ambient temperature of +25°C unless otherwise stated.