RF amplifier module 2100-2300 MHz, Gan 100W, 50 dBm Max, with circulator, N-J, (digital ARM microcontroller, LoRa)

RF amplifier module 2100–2300 MHz, GaN 100 W (up to 50 dBm), with circulator, ARM, LoRa, N-J - is a high-power radio frequency amplifier for working with RF signals in the range of 2100–2300 MHz. Thanks to GaN technology, the module provides high energy efficiency, stable output parameters and reliable operation under long-term loads. The built-in digital ARM microcontroller and LoRa support allow for precise control and monitoring of parameters.

The built-in circulator increases system reliability by protecting the output stage from reflected power, and the professional N-J connector guarantees stable and low-loss connection.

Technical specifications:

• Frequency range: 2100–2300 MHz
• Maximum output power: 100 W (50 dBm)
• Technology: GaN (gallium nitride)
• Microcontroller: ARM
• LoRa support: Yes
• Circulator: Built-in
• Connector: N-J
• Operating voltage: 28–32 V DC
• Efficiency: ≥60 %
• Operating temperature: –10 °C ~ +55 °C

Advantages:

• Output power up to 100 W (50 dBm) - significant performance margin in the 2100–2300 MHz range.
• GaN technology - high efficiency, less heat dissipation and long service life operation.
• ARM controller and LoRa support  - precise digital control and remote monitoring capability.
• Built-in circulator - protection against reflected power and stable operation under load.
• Professional N-J connector  reliable mechanical and electrical connection to RF components.