RF amplifier module 2100-2300 MHz, Gan 100W, 50 dBm, N-J

RF amplifier module 2100–2300 MHz, GaN 100 W (up to 50 dBm), N-J - high-power radio frequency amplifier for working with RF-signals in the 2.1–2.3 GHz range. The use of GaN technology ensures high energy efficiency, stable output parameters and reliable operation even under prolonged loads. The robust housing promotes effective heat dissipation, and the professional N-J connector guarantees a stable and low-loss connection.

Technical specifications

• Frequency range: 2100–2300 MHz
• Maximum output power: 100 W (50 dBm)
• Technology: GaN (gallium nitride)
• Connector: N-J
• Operating voltage: 28–32 V DC
• Efficiency: ≥60 %
• Operating temperature: -10 °C ~ +55 °C

Advantages

• Output power up to 100 W (50 dBm) - significant performance margin in the 2100–2300 MHz range.
• GaN technology - increased efficiency, less heat dissipation and long service life.
• Stable operating parameters - reliable performance under prolonged load.
• Rugged housing - effective cooling and mechanical protection.
• Professional N-J connector - reliable connection to antennas and RF components.